BPW21R document number 81519 rev. 1.5, 13-nov-06 vishay semiconductors www.vishay.com 1 94 8 394 silicon pn photodiode description BPW21R is a planar silicon pn photodiode in a her- metically sealed short to-5 case, especially designed for high precision linear applications. due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. on the other hand, there is a strictly logarithmic corre- lation between open circ uit voltage and illumination over the same range. the device is equipped with a flat glass window with built in color correction f ilter, giving an approximation to the spectral response of the human eye. features ? hermetically sealed to-5 case ? flat glass window with built-in color cor- rection filter for visible radiation ? cathode connected to case ? wide viewing angle ? = 50 ? large radiant sensitive area (a = 7.5 mm 2 ) ? suitable for visible radiation ? high sensitivity ? low dark current ? high shunt resistance ? excellent linearity ? for photodiode and photovoltaic cell operation ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? sensor in exposure and color measuring purposes absolute maximum ratings t amb = 25 c, unless otherwise specified e4 parameter test condition symbol value unit reverse voltage v r 10 v power dissipation t amb 50 c p v 300 mw junction temperature t j 125 c operating temperature range t amb - 55 to + 125 c storage temperature range t stg - 55 to + 125 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient r thja 250 k/w
www.vishay.com 2 document number 81519 rev. 1.5, 13-nov-06 BPW21R vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c unless otherwise specified parameter test condition symbol min ty p. max unit forward voltage i f = 50 ma v f 1.0 1.3 v breakdown voltage i r = 20 a, e = 0 v (br) 10 v reverse dark current v r = 5 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 1.2 nf v r = 5 v, f = 1 mhz, e = 0 c d 400 pf dark resistance v r = 10 mv r d 38 g parameter test condition symbol min ty p. max unit open circuit voltage e a = 1 klx v o 280 450 mv temp. coefficient of v o e a = 1 klx tk vo - 2 mv/k short circuit current e a = 1 klx i k 4.5 9 a temp. coefficient of i k e a = 1 klx tk lk - 0.05 %/k reverse light current e a = 1 klx, v r = 5 v i ra 4.5 9 a sensitivity v r = 5 v, e a = 10 -2 to 10 5 lx s9na/lx angle of half sensitivity ? 50 deg wavelength of peak sensitivity p 565 nm range of spectral bandwidth 0.5 420 to 675 nm rise time v r = 0 v, r l = 1 k , = 660 nm t r 3.1 s fall time v r = 0 v, r l = 1 k , = 660 nm t f 3.0 s figure 1. reverse dark current vs. ambient temperature 40 60 8 0 120 100 20 i-re v erse dark c u rrent (na) ro 94 8 46 8 10 10 1 10 2 10 3 10 4 v r =5 v t am b -am b ient temperat u re (c) figure 2. relative reverse light current vs. ambient temperature 0204060 8 0 0. 8 0.9 1.0 1.1 1.3 120 1.2 100 94 8 73 8 t am b ?am b ient temperat u re (c) i ? relati v ere v erse light c u rrent ra rel
BPW21R document number 81519 rev. 1.5, 13-nov-06 vishay semiconductors www.vishay.com 3 figure 3. short circuit current vs. illuminance figure 4. diode capacitance vs. reverse voltage figure 5. relative spectral sensitivity vs. wavelength 94 8 476 10 0 10 -2 10 -1 10 1 10 2 10 3 10 4 10 0 10 -1 10 -2 10 -3 10 -4 10 1 10 2 10 5 10 6 10 3 e a ? ill u minance (lx) i ? short circ u it c u rrent (ma) k 0 400 600 8 00 1200 1400 1000 200 0.1 10 1 c - diode capacitance (pf) d 100 94 8 473 e=0 f=1mhz v r -re v erse v oltage ( v ) 350 450 550 650 0 0.2 0.4 0.6 0. 8 1.0 750 94 8 477 v eye - w a v elength (nm) s ( ) rel - relati v e spectral sensiti v ity figure 6. relative radiant sens itivity vs. angular displacement 0.4 0.2 0 0.2 0.4 0.6 94 8 475 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 s - relati v e sensiti v ity rel
www.vishay.com 4 document number 81519 rev. 1.5, 13-nov-06 BPW21R vishay semiconductors package dimensions in mm 96 121 8 1
BPW21R document number 81519 rev. 1.5, 13-nov-06 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
